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| PRELIMINARY * FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS PERFORMANCE (3.5 GHz) (802.16-2004 WiMAX Modulation) 30 dBm Output Power, < 2.5% EVM 9.5 dB Power Gain Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN Class B Efficiency 18% (8V / 300 mA IDQ) BOND PAD BOND PAD 39 dBm CW Output Power (16X) (16X) > 48 dBm 3rd Order Intercept Point Plated Source Vias - No Source wirebonds needed 2.5 and 3.5 GHz Evaluation boards available (packaged device) DESCRIPTION AND APPLICATIONS DIE SIZE (m): 3750 x 750 DIE THICKNESS: 50m BONDING PADS (m): >70 x 60 SEE BONDING DIAGRAM BELOW * The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers. The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 - 1.5 A) to deliver optimal linear power over the desired output power range. The FPD10000V is also available in packaged form. * ELECTRICAL SPECIFICATIONS AT 22C Parameter Power at 1dB Gain Compression CW Single Tone Power Gain at dB Gain Compression CW Single Tone Channel Power with 802.16-2004 2.5% max. EVM Channel Power with 802.16-2004 2.5% max. EVM Power-Added Efficiency 802.16-2004 modulation Saturated Drain-Source Current Gate-Source Leakage Current Pinch-Off Voltage Gate-Drain Breakdown Voltage Thermal Resistivity IDSS IGSO |VP| |VBDGD| CC PCH PCH Eff G1dB Symbol P1dB Test Conditions VDS = 10V; IDQ = 1.0 A S and L tuned for Optimum IP3 VDS = 10V; IDQ = 1.0 A Class AB Mode Class AB Mode VDS = 10 V; IDQ = 1.0 A Class B Mode VDS = 8 V; IDQ = 350 mA typ. Class AB Mode Class B Mode VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 19 mA IGD = 19 mA See Note on following page 30 10 20 5.2 3 1.1 35 3.5 A mA V V C/W % 29.5 30 dBm 31.0 31.5 dBm 9.5 dB Min Typ 39.5 Max Units dBm RF SPECIFICATIONS MEASURED AT f = 3.5 GHz Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:/www.filtronic.co.uk/semis Revised: 8/5/05 Email: sales@filcsi.com PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS * RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 6V to 12V Quiescent Current: From 200mA (Class B) to 1.5A (Class A) ABSOLUTE MAXIMUM RATINGS1 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power 2 * Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Comp. 3 2 Test Conditions -3V < VGS < +0V 0V < VDS < +8V For VDS > 2V Forward or reverse current Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below Under any bias conditions 2 or more Max. Limits Min Max 15 -3 0.5IDSS +60/-15 2.25 175 Units V V mA mA W C C W dB % Channel Operating Temperature Storage Temperature Total Power Dissipation Gain Compression Simultaneous Combination of Limits 1 3 -40 150 40 5 80 Users should avoid exceeding 80% of 2 or more Limits simultaneously TAmbient = 22C unless otherwise noted Max. RF Input Limit must be further limited if input VSWR > 2.5:1 Notes: * Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. * Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib. * Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power * Absolute Maximum Power Dissipation to be de-rated as follows above 22C: PTOT= 40W - (0.29W/C) x THS where THS = heatsink or ambient temperature above 22C Example: For a 85C heatsink temperature: PTOT = 40W - (0.29 x (85 - 22)) = 21.7W * HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model.. ASSEMBLY INSTRUCTIONS The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 1.0 mil (0.025 mm) gold wire. Stage temperature should be 250-260C. http:/www.filtronic.co.uk/semis Revised: 8/5/05 Email: sales@filcsi.com * Phone: +1 408 850-5790 Fax: +1 408 850-5766 PRELIMINARY * FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS APPLICATIONS NOTES & DESIGN DATA Recommendations on matching circuits is available from your local Filtronic Sales Representative or directly from the factory. User must ensure that proper bias sequencing is observed: Gate bias must be applied before Drain bias, and during power-down the Drain bias must be removed first. BONDING / ASSEMBLY DIAGRAM Notes: 25 m (0.001 in.) gold wire is recommended. No Source wire bonds are needed, device features Source thru-vias. 16 bonds each side, Gate and Drain. User must ensure that the die attach material is uniform and free of voiding underneath the die to ensure proper thermal heatsinking. A useful guideline is a 0.001 - 0.002 in. (0.025 - 0.050 mm) fillet of die attach material all around the periphery of the die. * All information and specifications are subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:/www.filtronic.co.uk/semis Revised: 8/5/05 Email: sales@filcsi.com |
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